PSMN7R0-100ES NXP Semiconductors, PSMN7R0-100ES Datasheet - Page 9

• Manufacturer Part Number: PSMN7R0-100ES
• Description: Standard level N-channel MOSFET in I2PAK package qualified to 175C
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN7R0-100ES_3
Product data sheet
Fig 13. Drain-source on-state resistance as a function
Fig 15. Gate charge waveform definitions
R
(mΩ)
DS on
20
15
10
5
0
of drain current; typical values
0
V
V
V
V
GS(pl)
DS
GS(th)
GS
20
Q
GS1
I
Q
D
GS
40
V
Q
GS
GS2
(V) = 4.5
Q
G(tot)
60
Q
GD
10
80
All information provided in this document is subject to legal disclaimers.
003a a d563
003aaa508
I
D
20
(A)
Rev. 03 — 23 February 2010
5
6
100
N-channel 100V 6.8 mΩ standard level MOSFET in I2PAK.
Fig 14. Gate-source voltage as a function of gate
Fig 16. Input, output and reverse transfer capacitances
(pF)
V
C
(V)
10
10
10
GS
10
4
3
2
8
6
4
2
0
10
charge; typical values
as a function of drain-source voltage; typical
values
0
-1
PSMN7R0-100ES
50
1
20 V
80 V
100
10
V
© NXP B.V. 2010. All rights reserved.
Q
V
DS
G
DS
003aad569
003aad567
(nC)
= 50 V
(V)
C
C
C
oss
rss
iss
10
150
2
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