PSMN7R0-100ES NXP Semiconductors, PSMN7R0-100ES Datasheet - Page 5

Standard level N-channel MOSFET in I2PAK package qualified to 175C

PSMN7R0-100ES

Manufacturer Part Number
PSMN7R0-100ES
Description
Standard level N-channel MOSFET in I2PAK package qualified to 175C
Manufacturer
NXP Semiconductors
Datasheet

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5. Thermal characteristics
Table 5.
PSMN7R0-100ES_3
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Z
(K/W)
th (j-mb)
10
10
10
10
-1
-2
-3
-4
1
1e -6
Transient thermal impedance from junction to mounting base as a function of pulse duration
δ = 0.5
0.2
0.1
0.05
0.02
s ingle s hot
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
10
-5
10
-4
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 23 February 2010
10
Conditions
see
vertical in free air
-3
N-channel 100V 6.8 mΩ standard level MOSFET in I2PAK.
Figure 4
10
-2
10
PSMN7R0-100ES
-1
Min
-
-
P
1
Typ
0.3
60
t
p
T
© NXP B.V. 2010. All rights reserved.
t
p
(s )
003a a d560
δ =
Max
0.56
-
T
t
p
t
10
Unit
K/W
K/W
5 of 15

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