PSMN7R0-100BS NXP Semiconductors, PSMN7R0-100BS Datasheet - Page 8

• Manufacturer Part Number: PSMN7R0-100BS
• Description: Standard level N-channel MOSFET in D2PAK package qualified to 175C
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN7R0-100BS
Objective data sheet
Fig 11. Sub-threshold drain current as a function of
Fig 13. Drain-source on-state resistance as a function
(A)
R
I
(mΩ)
10
10
10
10
10
10
D
DS on
−1
−2
−3
−4
−5
−6
20
15
10
5
0
gate-source voltage
of drain current; typical values
0
0
20
2
40
V
min
GS
(V) = 4.5
60
typ
4
max
V
10
80
All information provided in this document is subject to legal disclaimers.
GS
003a a d563
(V)
I
D
03aa35
20
(A)
5
6
100
6
Rev. 2 — 2 March 2012
N-channel 100V 6.8 mΩ standard level MOSFET in D2PAK.
Fig 12. Normalized drain-source on-state resistance
Fig 14. Gate-source voltage as a function of gate
a
V
(V)
GS
3.2
2.4
1.6
0.8
10
8
6
4
2
0
0
-60
factor as a function of junction temperature
charge; typical values
0
0
PSMN7R0-100BS
50
20 V
80 V
60
100
120
V
Q
© NXP B.V. 2012. All rights reserved.
DS
G
003aad774
003aad569
T
(nC)
= 50 V
j
(°C)
180
150
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