PSMN7R0-100BS NXP Semiconductors, PSMN7R0-100BS Datasheet - Page 7

Standard level N-channel MOSFET in D2PAK package qualified to 175C

PSMN7R0-100BS

Manufacturer Part Number
PSMN7R0-100BS
Description
Standard level N-channel MOSFET in D2PAK package qualified to 175C
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
PSMN7R0-100BS
Objective data sheet
Fig 7.
Fig 9.
R
(mΩ)
(S )
g
DS on
240
fs
180
120
60
40
30
20
10
0
0
drain current; typical values
of gate-source voltage; typical values
Forward transconductance as a function of
Drain-source on-state resistance as a function
0
0
50
5
100
10
150
15
200
All information provided in this document is subject to legal disclaimers.
V
003a a d572
003a a d571
GS
I
D
(V)
(A)
250
20
Rev. 2 — 2 March 2012
N-channel 100V 6.8 mΩ standard level MOSFET in D2PAK.
Fig 8.
Fig 10. Gate-source threshold voltage as a function of
V
GS(th)
(V)
(A)
I
D
60
45
30
15
5
4
3
2
1
0
0
−60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics: drain current as a
0
0
PSMN7R0-100BS
T
j
2
= 175 °C
60
max
min
typ
4
120
T
© NXP B.V. 2012. All rights reserved.
j
V
= 25 °C
003a a d568
GS
003aad280
T
j
(°C)
(V)
180
6
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