PSMN3R5-30YL NXP Semiconductors, PSMN3R5-30YL Datasheet - Page 7

• Manufacturer Part Number: PSMN3R5-30YL
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN3R5-30YL
Product data sheet
Fig 9.
Fig 11. Sub-threshold drain current as a function of
10
10
10
10
10
10
(A)
120
g
100
(S)
I
D
fs
80
60
40
-1
-2
-3
-4
-5
-6
drain current; typical values
gate-source voltage
Forward transconductance as a function of
0
0
10
min
1
20
30
typ
2
V
40
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GS
003aab271
003aac718
max
I
(V)
D
(A)
50
3
Rev. 4 — 9 March 2011
N-channel 30 V 3.5 mΩ logic level MOSFET in LFPAK
Fig 10. Drain-source on-state resistance as a function
Fig 12. Gate-source threshold voltage as a function of
V
R
(mΩ)
GS (th)
(V)
DSon
6
5
4
3
2
3
2
1
0
-60
of drain current; typical values
junction temperature
0
V
20
GS
(V) = 3.2
0
PSMN3R5-30YL
40
max
typ
min
60
60
120
© NXP B.V. 2011. All rights reserved.
80
003aac707
003a a c337
T
j
I
D
(°C)
(A)
4.5
10
100
180
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