PSMN3R5-30YL NXP Semiconductors, PSMN3R5-30YL Datasheet - Page 4

• Manufacturer Part Number: PSMN3R5-30YL
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN3R5-30YL
Product data sheet
Symbol
R
Fig 3.
Fig 4.
th(j-mb)
Z
(K/W)
th(j-mb)
10
10
(A)
10
10
I
10
D
10
10
-1
-2
-1
1
3
2
1
10
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to mounting base as a function of pulse duration
-1
-6
δ = 0.5
0.2
0.1
0.05
0.02
Thermal characteristics
single shot
Parameter
thermal resistance from
junction to mounting base
10
-5
Limit R
DSon
All information provided in this document is subject to legal disclaimers.
10
= V
1
-4
DS
/ I
D
Conditions
see
Rev. 4 — 9 March 2011
Figure 4
10
N-channel 30 V 3.5 mΩ logic level MOSFET in LFPAK
DC
-3
10
10
-2
PSMN3R5-30YL
Min
-
10
P
-1
10 μ s
100 μs
1 ms
10 ms
100 ms
V
DS
t
p
Typ
0.6
(V)
T
t
p
© NXP B.V. 2011. All rights reserved.
(s)
003aac717
003aac731
δ =
Max
1.68
T
t
p
t
10
1
2
Unit
K/W
4 of 14