PMV65XP NXP Semiconductors, PMV65XP Datasheet - Page 7

• Manufacturer Part Number: PMV65XP
• Description: Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 13993
Product data sheet
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Gate-source voltage as a function of gate charge; typical values.
-V
(V)
GS(th)
1.2
0.8
0.4
0
I
junction temperature.
I
-60
D
D
= 1 mA; V
= 2.8 A; V
0
DS
DS
= V
= 6 V
max
typ
min
GS
60
-V
(V)
GS
120
5
4
3
2
1
0
0
03ar95
T
j
( C)
Rev. 01 — 28 September 2004
180
2
4
Fig 10. Sub-threshold drain current as a function of
6
P-channel TrenchMOS™ extremely low level FET
(A)
-I
10
10
10
10
D
-3
-4
-5
-6
T
gate-source voltage.
0
j
8
= 25 C; V
03ar51
Q
G
(nC)
0.2
10
DS
= 5 V
0.4
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
min
0.6
typ
PMV65XP
0.8
03ar96
max
-V
GS
(V)
1
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