PMV65XP NXP Semiconductors, PMV65XP Datasheet - Page 6

• Manufacturer Part Number: PMV65XP
• Description: Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 13993
Product data sheet
Fig 5. Output characteristics: drain current as a
Fig 7. Transfer characteristics: drain current as a
(A)
(A)
-I
-I
D
D
20
15
10
20
15
10
5
0
5
0
T
function of drain-source voltage; typical values.
T
function of gate-source voltage; typical values.
0
0
j
j
= 25 C
= 25 C and 150 C; V
T
j
= 150 C
0.5
1
25 C
1
2
DS
I
-4.5 V
D
x R
1.5
3
V
DSon
GS
-V
-3.5 V
03ar46
-V
03ar48
= -1.4 V
GS
DS
-2.5 V
-1.8 V
-1.6 V
(V)
-3 V
-2 V
(V)
Rev. 01 — 28 September 2004
4
2
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
P-channel TrenchMOS™ extremely low level FET
R
(m )
DSon
200
160
120
a
1.5
0.5
80
40
0
2
1
0
T
of drain current; typical values.
-60
factor as a function of junction temperature.
a
0
j
= 25 C
=
---------------------------- -
R
DSon 25 C
R
DSon
5
0
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
10
60
V
GS
= -2.5 V
PMV65XP
120
15
03ar47
-I
03aq10
T
D
j
-3.5 V
-4.5 V
-3 V
( C)
(A)
180
20
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