PMV65XP NXP Semiconductors, PMV65XP Datasheet - Page 4

• Manufacturer Part Number: PMV65XP
• Description: Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
5. Thermal characteristics
Table 4:
9397 750 13993
Product data sheet
Symbol Parameter
R
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.
th(j-sp)
Z
(K/W)
th(j-sp)
10
10
10
-1
2
1
10
thermal resistance from junction to solder point
-5
0.2
0.1
0.05
0.02
Thermal characteristics
0.5
5.1 Transient thermal impedance
single pulse
10
-4
10
-3
Rev. 01 — 28 September 2004
10
Conditions
Figure 4
-2
P-channel TrenchMOS™ extremely low level FET
10
-1
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
P
1
Min
-
t
p
PMV65XP
t
p
T
(s)
Typ
-
03ar45
=
T
t
p
Max
65
t
10
4 of 12
Unit
K/W