PMV65XP NXP Semiconductors, PMV65XP Datasheet - Page 3

• Manufacturer Part Number: PMV65XP
• Description: Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 13993
Product data sheet
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
(A)
-I
10
10
P
10
(%)
120
D
10
der
-1
-2
80
40
2
1
0
10
function of solder point temperature.
T
P
0
sp
der
-1
= 25 C; I
=
---------------------- -
P
tot 25 C
50
P
DM
tot
is single pulse; V
100%
100
Limit R
DSon
GS
150
= -V
= 4.5 V
T
03aa17
DS
sp
1
( C)
/ -I
D
Rev. 01 — 28 September 2004
200
DC
Fig 2. Normalized continuous drain current as a
P-channel TrenchMOS™ extremely low level FET
(%)
I
der
120
80
40
0
function of solder point temperature.
I
0
der
=
10
-------------------
I
D 25 C
I
50
D
100%
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
t
100 s
1 ms
10 ms
100 ms
p
100
= 10 s
-V
DS
(V)
PMV65XP
150
T
03ar44
03aa25
sp
( C)
10
200
2
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