PMV28UN NXP Semiconductors, PMV28UN Datasheet - Page 8

• Manufacturer Part Number: PMV28UN
• Description: N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMV28UN
Product data sheet
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source current as a function of source-drain voltage; typical values
V
(V)
GS
5
4
3
2
1
0
charge; typical values
I
V
(1) T
(2) T
0
D
GS
= 3 A; V
= 0 V
j
j
= 150 °C
= 25 °C
DS
= 10 V; T
2
amb
= 25 °C
(A)
4
I
S
2.0
1.5
1.0
0.5
0.0
0.0
Q
All information provided in this document is subject to legal disclaimers.
G
017aaa238
(nC)
6
0.2
Rev. 1 — 26 May 2011
0.4
Fig 15. Gate charge waveform definitions
(1)
0.6
V
V
V
V
V
GS(pl)
017aaa239
DS
GS(th)
GS
SD
(2)
(V)
20 V, 3.3 A N-channel Trench MOSFET
0.8
Q
GS1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
PMV28UN
© NXP B.V. 2011. All rights reserved.
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