PMV28UN NXP Semiconductors, PMV28UN Datasheet - Page 5

• Manufacturer Part Number: PMV28UN
• Description: N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Characteristics
Table 7.
PMV28UN
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
g
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
DSS
GSS
d(on)
r
d(off)
f
fs
(BR)DSS
GSth
SD
DSon
iss
oss
rss
G(tot)
GS
GD
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
transconductance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
forward
Conditions
I
I
V
V
V
V
V
V
V
V
V
V
T
V
T
V
T
I
All information provided in this document is subject to legal disclaimers.
D
D
S
j
j
j
DS
DS
GS
GS
GS
GS
GS
GS
DS
DS
DS
DS
= 250 µA; V
= 250 µA; V
= 25 °C
= 25 °C
= 25 °C; I
= 0.6 A; V
= 20 V; V
= 20 V; V
= 10 V; I
= 10 V; I
= 10 V; f = 1 MHz; V
= 10 V; V
= 8 V; V
= -8 V; V
= 4.5 V; I
= 4.5 V; I
= 2.5 V; I
= 1.8 V; I
Rev. 1 — 26 May 2011
D
GS
DS
D
D
DS
D
D
D
D
GS
GS
GS
= 3 A
GS
DS
= 3 A; T
= 3 A; V
= 3.3 A; T
= 3.3 A; T
= 3 A; T
= 2.4 A; T
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= 4.5 V; R
= V
= 0 V; T
GS
j
GS
; T
j
j
j
= 25 °C
j
= 25 °C
= 25 °C
= 25 °C
j
j
GS
= 25 °C
j
j
j
j
= 25 °C
= 150 °C
j
= 4.5 V;
= 25 °C
= 25 °C
= 150 °C
= 25 °C
= 25 °C
G(ext)
= 0 V;
= 6 Ω;
20 V, 3.3 A N-channel Trench MOSFET
Min
20
0.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
0.7
-
-
-
-
25
38
30
39
15
5.8
0.8
1.7
470
123
72
9
25
126
60
0.7
PMV28UN
© NXP B.V. 2011. All rights reserved.
Max
-
1
1
25
100
100
32
48
40
65
-
9
-
-
-
-
-
-
-
-
-
1.2
ns
Unit
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
S
nC
nC
nC
pF
pF
pF
ns
ns
ns
V
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