PMV28UN NXP Semiconductors, PMV28UN Datasheet - Page 4

• Manufacturer Part Number: PMV28UN
• Description: N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Thermal characteristics
Table 6.
[1]
[2]
PMV28UN
Product data sheet
Symbol
R
R
Fig 4.
Fig 5.
th(j-a)
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
1
1
3
2
10
3
2
10
FR4 PCB, standard footprint
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, mounting pad for drain 6 cm
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
–3
–3
duty cycle = 1
Thermal characteristics
0.25
0.02
duty cycle = 1
0.5
0.1
0.25
0.02
0.5
0.1
0
0
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
0.75
0.33
0.05
0.01
0.2
0.75
0.33
0.05
0.01
0.2
10
10
–2
–2
Conditions
in free air
All information provided in this document is subject to legal disclaimers.
10
10
–1
–1
2
Rev. 1 — 26 May 2011
1
1
10
10
20 V, 3.3 A N-channel Trench MOSFET
[1]
[2]
2
.
Min
-
-
-
10
10
2
2
Typ
285
208
60
PMV28UN
t
t
p
p
© NXP B.V. 2011. All rights reserved.
(s)
(s)
017aaa228
017aaa229
Max
330
240
70
10
10
3
3
Unit
K/W
K/W
K/W
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