PMV28UN NXP Semiconductors, PMV28UN Datasheet

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology

PMV28UN

Manufacturer Part Number
PMV28UN
Description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
Manufacturer
NXP Semiconductors
Datasheet
1.PMV28UN.pdf (15 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
PMV28UN
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
PMV28UNEA
Manufacturer:
NXP/恩智浦
Quantity:
20 000
1. Product profile
Table 1.
[1]
2. Pinning information
Table 2.
Symbol
V
V
I
Static characteristics
R
Pin
1
2
3
D
DS
GS
DSon
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm
Symbol Description
G
S
D
Quick reference data
Pinning information
Parameter
drain-source voltage
gate-source voltage
drain current
drain-source on-state
resistance
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
gate
source
drain
N-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
PMV28UN
20 V, 3.3 A N-channel Trench MOSFET
Rev. 1 — 26 May 2011
Low threshold voltage
Very fast switching
Relay driver
High-speed line driver
Conditions
T
V
V
j
GS
GS
= 25 °C
= 4.5 V; T
= 4.5 V; I
Simplified outline
D
amb
SOT23 (TO-236AB)
= 3.3 A; T
= 25 °C
1
j
= 25 °C
3
2
Trench MOSFET technology
Low-side loadswitch
Switching circuits
[1]
Graphic symbol
Min
-
-8
-
-
mbb076
G
Product data sheet
Typ
-
-
-
25
D
S
2
Max
20
8
3.3
32
.
Unit
V
V
A
mΩ

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PMV28UN Summary of contents

Page 1

... PMV28UN 20 V, 3.3 A N-channel Trench MOSFET Rev. 1 — 26 May 2011 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Low threshold voltage  Very fast switching 1.3 Applications  ...

Page 2

... GS amb °C; single pulse; t amb °C amb ° °C amb All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 May 2011 PMV28UN 20 V, 3.3 A N-channel Trench MOSFET Version SOT23 Min Max - [1] - 3.3 [1] - 2.2 ≤ 10 µs ...

Page 3

... T (°C) j Fig 2. Normalized continuous drain current as a function of junction temperature 1 2 All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 May 2011 PMV28UN 20 V, 3.3 A N-channel Trench MOSFET 017aaa124 − 125 175 T (°C) j 017aaa227 (1) (2) (3) (4) ...

Page 4

... Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMV28UN Product data sheet Conditions in free air – – All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 May 2011 PMV28UN 20 V, 3.3 A N-channel Trench MOSFET Min Typ Max [1] - 285 330 [2] - 208 240 - ...

Page 5

... 4 G(ext ° 0 ° All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 May 2011 PMV28UN 20 V, 3.3 A N-channel Trench MOSFET Min Typ Max 0.4 0 100 - - 100 ...

Page 6

... I ( (1) T (2) T Fig 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 May 2011 PMV28UN 20 V, 3.3 A N-channel Trench MOSFET 017aaa231 (1) (2) (3) 0.2 0.4 0.6 0 ° 017aaa233 ...

Page 7

... MHz; V (1) C (2) C (3) C Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 May 2011 PMV28UN 20 V, 3.3 A N-channel Trench MOSFET 017aaa235 0 60 120 180 T (°C) j 017aaa237 ...

Page 8

... Q (nC °C Fig 15. Gate charge waveform definitions 2 (A) 1.5 (1) 1.0 0.5 0.0 0.0 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 May 2011 PMV28UN 20 V, 3.3 A N-channel Trench MOSFET GS(pl) V GS(th GS1 GS2 G(tot) 017aaa137 017aaa239 (2) 0 ...

Page 9

... Test information Fig 17. Duty cycle definition PMV28UN Product data sheet duty cycle δ 006aaa812 All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 May 2011 PMV28UN 20 V, 3.3 A N-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...

Page 10

... 3.0 1.4 2.5 0.45 1.9 0.95 2.8 1.2 2.1 0.15 REFERENCES JEDEC JEITA TO-236AB All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 May 2011 PMV28UN 20 V, 3.3 A N-channel Trench MOSFET detail 0.55 0.2 0.1 0.45 EUROPEAN ISSUE DATE PROJECTION 04-11-04 06-03-16 © NXP B.V. 2011. All rights reserved. ...

Page 11

... All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 May 2011 PMV28UN 20 V, 3.3 A N-channel Trench MOSFET solder lands solder resist solder paste occupied area Dimensions in mm sot023_fr solder lands solder resist occupied area ...

Page 12

... NXP Semiconductors 11. Revision history Table 8. Revision history Document ID Release date PMV28UN v.1 20110526 PMV28UN Product data sheet Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 May 2011 PMV28UN 20 V, 3.3 A N-channel Trench MOSFET ...

Page 13

... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 May 2011 PMV28UN 20 V, 3.3 A N-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...

Page 14

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 May 2011 PMV28UN 20 V, 3.3 A N-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PMV28UN All rights reserved. Date of release: 26 May 2011 Document identifier: PMV28UN ...

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