PMDT290UNE NXP Semiconductors, PMDT290UNE Datasheet - Page 8

• Manufacturer Part Number: PMDT290UNE
• Description: Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMDT290UNE
Product data sheet
Fig 10. Transfer characteristics: drain current as a
Fig 12. Gate-source threshold voltage as a function of
V
GS(th)
(A)
(V)
I
1.25
1.00
0.75
0.50
0.25
0.00
D
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
–60
0.0
function of gate-source voltage; typical values
junction temperature
V
(1) T
(2) T
I
(1) maximum values
(2) typical values
(3) minimum values
D
DS
= 0.25 mA; V
> I
j
j
= 25 °C
= 150 °C
D
0.5
× R
0
DSon
(2)
DS
1.0
= V
60
(1)
(2)
(3)
(1)
GS
1.5
120
2.0
All information provided in this document is subject to legal disclaimers.
017aaa355
017aaa357
T
V
j
GS
(°C)
(V)
Rev. 1 — 13 September 2011
180
2.5
Fig 11. Normalized drain-source on-state resistance as
Fig 13. Input, output and reverse transfer capacitances
(pF)
C
a
1.75
1.50
1.25
1.00
0.75
0.50
10
20 V, 800 mA dual N-channel Trench MOSFET
10
1
2
10
–60
a function of junction temperature; typical
values
as a function of drain-source voltage; typical
values
f = 1 MHz; V
(1) C
(2) C
(3) C
–1
iss
oss
rss
0
GS
1
= 0 V
PMDT290UNE
60
10
(1)
(2)
(3)
120
V
© NXP B.V. 2011. All rights reserved.
DS
017aaa356
T
017aaa358
j
(V)
(°C)
180
10
2
8 of 16