PMDT290UNE NXP Semiconductors, PMDT290UNE Datasheet - Page 3

• Manufacturer Part Number: PMDT290UNE
• Description: Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
PMDT290UNE
Product data sheet
Symbol
T
Source-drain diode
I
ESD maximum rating
V
S
Fig 1.
stg
ESD
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Measured between all pins.
P
(%)
der
120
80
40
0
−75
function of junction temperature
Normalized total power dissipation as a
Limiting values
Parameter
storage temperature
source current
electrostatic discharge voltage
−25
25
…continued
75
125
All information provided in this document is subject to legal disclaimers.
017aaa123
T
j
(°C)
Rev. 1 — 13 September 2011
175
Conditions
T
HBM
amb
= 25 °C
Fig 2.
(%)
I
der
120
20 V, 800 mA dual N-channel Trench MOSFET
80
40
0
−75
function of junction temperature
Normalized continuous drain current as a
−25
25
PMDT290UNE
[3]
75
Min
-65
-
-
125
© NXP B.V. 2011. All rights reserved.
017aaa124
T
j
2
150
Max
370
2000
(°C)
.
175
Unit
°C
mA
V
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