PMDT290UNE NXP Semiconductors, PMDT290UNE Datasheet
PMDT290UNE
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PMDT290UNE Summary of contents
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... PMDT290UNE 20 V, 800 mA dual N-channel Trench MOSFET Rev. 1 — 13 September 2011 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits ...
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... 100 °C GS amb °C; single pulse; t amb °C amb ° °C amb All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 September 2011 PMDT290UNE Graphic symbol Version SOT666 Min Max - [1] - 800 ...
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... PMDT290UNE Product data sheet Conditions °C amb HBM 017aaa123 75 125 175 T (°C) j Fig 2. All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 September 2011 PMDT290UNE 20 V, 800 mA dual N-channel Trench MOSFET Min -65 - [3] - 120 I der (%) −75 − ...
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... Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm PMDT290UNE Product data sheet = V /I DSon Conditions in free air in free air All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 September 2011 PMDT290UNE 20 V, 800 mA dual N-channel Trench MOSFET (1) (2) (3) (4) ( (V) DS Min Typ [1] - ...
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... Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMDT290UNE Product data sheet 20 V, 800 mA dual N-channel Trench MOSFET − − All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 September 2011 PMDT290UNE 017aaa064 (s) p 017aaa065 (s) p © ...
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... 4 Ω °C G(ext 300 mA ° All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 September 2011 PMDT290UNE Min Typ Max Unit 0.5 0.75 0. µ µ µ ...
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... GS 1.4 V 1 (V) DS Fig 7. 017aaa353 (3) (4) (5) (6) 0.5 0.6 0.7 I (A) D Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 September 2011 PMDT290UNE 20 V, 800 mA dual N-channel Trench MOSFET – (A) –4 10 (1) (2) –5 10 –6 10 0.00 0.25 0.50 0. ° (1) minimum values ...
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... GS Fig 11. Normalized drain-source on-state resistance as 017aaa357 120 180 T (°C) j Fig 13. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 September 2011 PMDT290UNE 20 V, 800 mA dual N-channel Trench MOSFET 1.75 a 1.50 1.25 1.00 0.75 0.50 – function of junction temperature; typical ...
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... °C amb Fig 15. Gate charge waveform definitions 0 (A) 0.6 0.5 0.4 (1) 0.3 0.2 0.1 0.0 0.0 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 September 2011 PMDT290UNE 20 V, 800 mA dual N-channel Trench MOSFET GS(pl) V GS(th GS1 GS2 G(tot) 017aaa360 (2) 0 ...
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... PMDT290UNE Product data sheet 20 V, 800 mA dual N-channel Trench MOSFET duty cycle δ 006aaa812 All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 September 2011 PMDT290UNE © NXP B.V. 2011. All rights reserved ...
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... 1.3 1.7 0.3 1.0 0.5 1.1 1.5 0.1 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 September 2011 PMDT290UNE 20 V, 800 mA dual N-channel Trench MOSFET detail 0.1 0.1 EUROPEAN PROJECTION SOT666 X c ISSUE DATE 04-11-08 06-03-16 © NXP B.V. 2011. All rights reserved. ...
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... All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 September 2011 PMDT290UNE solder lands 0.3 0.25 placement area (2×) (2×) solder paste occupied area 0.375 Dimensions in mm (4×) (4×) sot666_fr © NXP B.V. 2011. All rights reserved. ...
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... NXP Semiconductors 11. Revision history Table 8. Revision history Document ID Release date PMDT290UNE v.1 20110913 PMDT290UNE Product data sheet 20 V, 800 mA dual N-channel Trench MOSFET Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 September 2011 ...
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... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 September 2011 PMDT290UNE © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 September 2011 PMDT290UNE © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 13 September 2011 Document identifier: PMDT290UNE ...