PMDT290UNE NXP Semiconductors, PMDT290UNE Datasheet - Page 5

• Manufacturer Part Number: PMDT290UNE
• Description: Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMDT290UNE
Product data sheet
Fig 4.
Fig 5.
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
1
1
3
2
3
2
10
10
typical values
typical values
FR4 PCB; standard footprint
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
FR4 PCB, mounting pad for drain 1 cm
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
−3
−3
duty cycle = 1
duty cycle = 1
0.25
0.25
0.5
0.1
0.5
0.1
0
0
0.75
0.33
0.05
0.75
0.33
0.05
0.02
0.01
0.2
0.02
0.01
0.2
10
10
−2
−2
All information provided in this document is subject to legal disclaimers.
10
10
−1
−1
Rev. 1 — 13 September 2011
2
1
1
20 V, 800 mA dual N-channel Trench MOSFET
10
10
PMDT290UNE
10
10
2
2
t
t
p
p
© NXP B.V. 2011. All rights reserved.
(s)
(s)
017aaa064
017aaa065
10
10
3
3
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