BUK9606-40B NXP Semiconductors, BUK9606-40B Datasheet - Page 9

• Manufacturer Part Number: BUK9606-40B
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9606-40B
Product data sheet
Fig 13. Gate-source voltage as a function of gate
Fig 15. Source current as a function of source-drain voltage; typical values
V
(V)
GS
5
4
3
2
1
0
charge; typical values
0
10
V
DD
20
= 14 V
30
(A)
I
S
100
V
75
50
25
DD
0
0.0
= 32 V
40
All information provided in this document is subject to legal disclaimers.
Q
G
03nm14
(nC)
Rev. 02 — 1 February 2011
50
T
0.3
j
= 175 °C
0.6
Fig 14. Input, output and reverse transfer capacitances
(pF)
7000
5250
3500
1750
C
0.9
0
10
as a function of drain-source voltage; typical
values
T
−2
j
= 25 °C
V
SD
03nm13
(V)
N-channel TrenchMOS logic level FET
1.2
10
−1
C
C
C
oss
rss
iss
BUK9606-40B
1
10
© NXP B.V. 2011. All rights reserved.
V
DS
03nm20
(V)
10
2
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