BUK9606-40B NXP Semiconductors, BUK9606-40B Datasheet - Page 8

• Manufacturer Part Number: BUK9606-40B
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9606-40B
Product data sheet
Fig 9.
Fig 11. Normalized drain-source on-state resistance
(A)
I
D
a
100
1.5
0.5
75
50
25
0
2
1
0
−60
function of gate-source voltage; typical values
factor as a function of junction temperature
Transfer characteristics: drain current as a
0
0
1
T
j
= 175 °C
60
2
120
3
T
j
All information provided in this document is subject to legal disclaimers.
V
= 25 °C
GS
T
j
03nm16
( ° C)
03aa27
(V)
Rev. 02 — 1 February 2011
180
4
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Drain-source on-state resistance as a function
R
V
(mΩ)
DSon
GS(th)
(V)
2.5
2.0
1.5
1.0
0.5
16
12
0
8
4
−60
junction temperature
of drain current; typical values
0
3
3.2 3.4 3.6
N-channel TrenchMOS logic level FET
0
100
3.8
BUK9606-40B
60
4
max
min
typ
Label is V
200
120
© NXP B.V. 2011. All rights reserved.
I
D
GS
T
(A)
j
03nm19
(°C)
10
(V)
03ng52
5
180
300
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