BUK9606-40B NXP Semiconductors, BUK9606-40B Datasheet - Page 3

• Manufacturer Part Number: BUK9606-40B
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
BUK9606-40B
Product data sheet
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
DS
DGR
GS
tot
DS(AL)S
Current is limited by power dissipation chip rating
Continuous current is limited by package
(A)
I
D
150
100
50
0
mounting base temperature
Continuous drain current as a function of
0
Capped at 75 A due to package
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
50
100
150
All information provided in this document is subject to legal disclaimers.
T
mb
03nm23
(°C)
Rev. 02 — 1 February 2011
200
T
Conditions
T
R
T
see
T
T
see
T
pulsed; t
I
V
D
j
mb
mb
mb
mb
mb
GS
GS
≥ 25 °C; T
= 75 A; V
Figure 3
Figure 3
= 25 °C; V
= 100 °C; V
= 25 °C; pulsed; t
= 25 °C; see
= 25 °C
= 5 V; T
= 20 kΩ
p
Fig 2.
≤ 10 µs; T
sup
j(init)
j
P
(%)
≤ 175 °C
der
GS
120
≤ 40 V; R
80
40
GS
= 25 °C; unclamped
0
Figure 2
= 5 V; see
function of mounting base temperature
Normalized total power dissipation as a
0
= 5 V; see
mb
p
= 25 °C
≤ 10 µs;
GS
N-channel TrenchMOS logic level FET
= 50 Ω;
50
Figure
Figure 1
1;
BUK9606-40B
100
[1]
[2]
[2]
[2]
[1]
Min
-
-
-15
-
-
-
-
-
-55
-55
-
-
-
-
150
© NXP B.V. 2011. All rights reserved.
T
mb
175
175
Max
40
40
15
129
75
75
516
203
75
129
516
494
03na19
(°C)
200
Unit
V
V
V
A
A
A
A
W
°C
°C
A
A
A
mJ
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