BUK9606-40B NXP Semiconductors, BUK9606-40B Datasheet - Page 4
![Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology](/photos/41/50/415039/sot404_3d_sml.gif)
BUK9606-40B
Manufacturer Part Number
BUK9606-40B
Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
1.BUK9606-40B.pdf
(14 pages)
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NXP Semiconductors
BUK9606-40B
Product data sheet
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
(A)
I
D
10
10
10
1
3
2
10
−1
Limit R
Capped at 75 A due to package
All information provided in this document is subject to legal disclaimers.
DSon
= V
1
Rev. 02 — 1 February 2011
DS
/ I
D
10
DC
N-channel TrenchMOS logic level FET
V
DS
(V)
t
100 μ s
1 ms
10 ms
100 ms
p
BUK9606-40B
= 10 μ s
03nm21
10
2
© NXP B.V. 2011. All rights reserved.
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