BUK755R2-40B NXP Semiconductors, BUK755R2-40B Datasheet - Page 9

• Manufacturer Part Number: BUK755R2-40B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK755R2-40B_2
Product data sheet
Fig 13. Source current as a function of source-drain
Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
100
I S
(A)
75
50
25
0
voltage; typical values
0.0
0.3
T j = 175 °C
0.6
(pF)
C
4000
3000
2000
1000
0.9
0
T j = 25 °C
10 -1
V SD (V)
03nk14
1.2
Rev. 02 — 16 January 2009
1
C iss
C oss
C rss
Fig 14. Gate-source voltage as a function of gate
10
V GS
(V)
10
8
6
4
2
0
charge; typical values
V DS (V)
0
N-channel TrenchMOS standard level FET
03nk21
10 2
V DD = 14 V
20
BUK755R2-40B
40
V DD = 32 V
Q G (nC)
© NXP B.V. 2009. All rights reserved.
03nk15
60
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