BUK755R2-40B NXP Semiconductors, BUK755R2-40B Datasheet - Page 7

• Manufacturer Part Number: BUK755R2-40B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK755R2-40B_2
Product data sheet
Fig 5.
Fig 7.
(A)
I D
(A)
I
10
10
10
10
10
10
D
400
300
200
100
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
14
12
20
2
10
2
9.5
9
4
min
8.5
8
7.5
7
6.5
6
5.5
5
4.5
typ
6
label is V GS (V)
4
max
V
8
GS
V DS (V)
(V)
03nk19
03aa35
Rev. 02 — 16 January 2009
10
6
Fig 6.
Fig 8.
R DSon
(mΩ)
g fs
(S)
18
13
80
60
40
20
8
3
0
of gate-source voltage; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
5
0
N-channel TrenchMOS standard level FET
20
10
BUK755R2-40B
40
15
60
V GS (V)
© NXP B.V. 2009. All rights reserved.
I D (A)
03nk16
03nk18
80
20
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