BUK755R2-40B NXP Semiconductors, BUK755R2-40B Datasheet - Page 4

• Manufacturer Part Number: BUK755R2-40B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK755R2-40B_2
Product data sheet
Fig 1.
Fig 3.
(A)
I D
(A)
I D
150
100
10 3
10 2
50
10
1
0
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
10 -1
0
Capped at 75 A due to package
50
100
Limit R DSon = V DS /I D
150
Capped at 75 A due to package
T mb (°C)
1
03nj26
200
Rev. 02 — 16 January 2009
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
N-channel TrenchMOS standard level FET
10
DC
50
BUK755R2-40B
100
V DS (V)
150
t p = 10 µs
100 µs
1 ms
10 ms
100 ms
© NXP B.V. 2009. All rights reserved.
T
mb
03nj24
03na19
(°C)
10 2
200
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