BUK755R2-40B NXP Semiconductors, BUK755R2-40B Datasheet
BUK755R2-40B
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BUK755R2-40B Summary of contents
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... BUK755R2-40B N-channel TrenchMOS standard level FET Rev. 02 — 16 January 2009 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
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... Product data sheet N-channel TrenchMOS standard level FET Simplified outline SOT78A (3-lead TO-220AB; SC-46) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB Rev. 02 — 16 January 2009 BUK755R2-40B Graphic symbol mbb076 3 Version SOT78A © NXP B.V. 2009. All rights reserved ...
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... °C; mb ≤ 10 µs; pulsed ° ≤ Ω sup °C; unclamped j(init) Rev. 02 — 16 January 2009 BUK755R2-40B N-channel TrenchMOS standard level FET Min Max - - see Figure 3; [1] - 143 1; see Figure 3; [2] ...
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... T mb (°C) Fig 2. Limit R DSon = Capped due to package 1 Rev. 02 — 16 January 2009 BUK755R2-40B N-channel TrenchMOS standard level FET 0 50 100 150 T mb Normalized total power dissipation as a function of mounting base temperature 03nj24 µs 100 µ ...
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... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK755R2-40B_2 Product data sheet Conditions see Figure 4 vertical in still air Rev. 02 — 16 January 2009 BUK755R2-40B N-channel TrenchMOS standard level FET Min Typ Max - - 0. 03nj25 t p δ = ...
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... ° °C; see Figure /dt = -100 A/µ - ° Rev. 02 — 16 January 2009 BUK755R2-40B N-channel TrenchMOS standard level FET Min Typ Max 4 ...
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... V (V) GS Fig 8. Forward transconductance as a function of drain current; typical values Rev. 02 — 16 January 2009 BUK755R2-40B N-channel TrenchMOS standard level FET 03nk18 (V) 03nk16 (A) © NXP B.V. 2009. All rights reserved ...
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... Fig 10. Gate-source threshold voltage as a function of junction temperature 2 03nk20 a 1 0.5 0 -60 300 400 I D (A) Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature Rev. 02 — 16 January 2009 BUK755R2-40B N-channel TrenchMOS standard level FET 03aa32 max typ min 0 60 120 T (°C) j 03aa27 0 60 120 ( ° © ...
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... C C iss (pF) 3000 C oss 2000 1000 C rss (V) Rev. 02 — 16 January 2009 BUK755R2-40B N-channel TrenchMOS standard level FET 03nk15 (nC) 03nk21 10 2 © NXP B.V. 2009. All rights reserved ...
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... 0.7 15.8 6.4 10.3 15.0 2.54 0.4 15.2 5.9 9.7 13.5 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 Rev. 02 — 16 January 2009 BUK755R2-40B N-channel TrenchMOS standard level FET base ( max. 3.30 3.8 3.0 2.6 3.0 2.79 3.6 2.7 2.2 EUROPEAN ISSUE DATE PROJECTION 03-01-22 05-03-14 © NXP B.V. 2009. All rights reserved. SOT78A ...
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... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK755R2-40B separated from data sheet BUK75_765R2_40B-01. • Package outline updated. BUK75_765R2_40B-01 20030514 ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 16 January 2009 BUK755R2-40B N-channel TrenchMOS standard level FET © NXP B.V. 2009. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BUK755R2-40B_2 All rights reserved. Date of release: 16 January 2009 ...