BUK7511-55A NXP Semiconductors, BUK7511-55A Datasheet - Page 8

• Manufacturer Part Number: BUK7511-55A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7511-55A
Product data sheet
Fig 13. Normalized drain-source on-state resistance
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
a
2.4
1.8
1.2
0.6
0
−60
factor as a function of junction temperature
0
60
(A)
I
S
140
120
100
80
60
40
20
120
0
0
All information provided in this document is subject to legal disclaimers.
T
j
(°C)
03aa28
180
Rev. 02 — 17 June 2010
0.5
T
j
= 175 °C
Fig 14. Input, output and reverse capacitances as a
(pF)
C
1.0
4500
4000
3500
3000
2500
2000
1500
1000
500
T
0
j
10
function of drain-source voltage; typical values
= 25 °C
V
−2
SD
N-channel TrenchMOS standard level FET
(V)
03nd18
C
C
C
oss
iss
rss
1.5
10
−1
BUK7511-55A
1
10
© NXP B.V. 2010. All rights reserved.
V
DS
03nd25
(V)
10
2
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