BUK7511-55A NXP Semiconductors, BUK7511-55A Datasheet - Page 7

• Manufacturer Part Number: BUK7511-55A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7511-55A
Product data sheet
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
GS(th)
(A)
(V)
I
D
140
120
100
80
60
40
20
0
5
4
3
2
1
0
−60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics: drain current as a
0
2
0
T
j
= 175 °C
60
4
max
min
typ
T
j
= 25 °C
120
6
All information provided in this document is subject to legal disclaimers.
V
T
GS
j
(°C)
03nd21
03aa32
(V)
180
8
Rev. 02 — 17 June 2010
Fig 10. Gate-source voltage as a function of turn-on
Fig 12. Drain-source on-state resistance as a function
R
(mΩ)
V
DSon
(V)
GS
22
18
14
10
10
8
6
4
2
0
6
gate charge; typical values
of drain current; typical values
0
0
N-channel TrenchMOS standard level FET
5.5
6 6.5
20
100
V
DD
= 14 V
7
BUK7511-55A
40
8
200
V
DD
V
60
GS
= 44 V
© NXP B.V. 2010. All rights reserved.
I
(V) = 10
D
Q
G
(A)
(nC)
03nd19
03nd24
300
80
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