BUK7511-55A NXP Semiconductors, BUK7511-55A Datasheet - Page 3

• Manufacturer Part Number: BUK7511-55A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BUK7511-55A
Product data sheet
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
DS
DGR
GS
tot
DS(AL)S
I
(%)
der
120
80
40
0
function of mounting base temperature
Normalized continuous drain current as a
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive
drain-source
avalanche energy
50
100
150
Conditions
T
R
T
see
T
T
see
T
T
t
I
V
All information provided in this document is subject to legal disclaimers.
p
D
T
j
mb
mb
mb
mb
mb
GS
GS
mb
≤ 10 µs; pulsed; T
≥ 25 °C; T
= 65 A; V
Figure 3
Figure 3
03aa24
= 25 °C; V
= 100 °C; V
= 25 °C; t
= 25 °C; see
= 25 °C
(°C)
= 10 V; T
= 20 kΩ
200
Rev. 02 — 17 June 2010
sup
j
≤ 175 °C
j(init)
p
GS
≤ 55 V; R
≤ 10 µs; pulsed;
GS
Figure 2
= 10 V; see
= 25 °C; unclamped
= 10 V; see
mb
Fig 2.
= 25 °C
GS
P
(%)
der
120
= 50 Ω;
80
40
0
Figure
function of mounting base temperature
Normalized total power dissipation as a
0
Figure 1
N-channel TrenchMOS standard level FET
1;
50
BUK7511-55A
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
100
Typ
-
-
-
-
-
-
-
-
-
-
-
-
150
© NXP B.V. 2010. All rights reserved.
T
mb
175
Max
55
55
20
75
61
347
166
175
75
347
211
03na19
(°C)
200
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
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