BUK7511-55A NXP Semiconductors, BUK7511-55A Datasheet - Page 6

• Manufacturer Part Number: BUK7511-55A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7511-55A
Product data sheet
Fig 5.
Fig 7.
(A)
(A)
I
I
10
10
10
10
10
10
D
D
400
300
200
100
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
16
2
18
20
2
4
min
14
12
typ
6
4
V
GS
max
V
All information provided in this document is subject to legal disclaimers.
8
GS
(V) = 10
V
DS
(V)
03nd23
03aa35
(V)
10
6
Rev. 02 — 17 June 2010
9.5
8.5
7.5
6.5
5.5
4.5
Fig 6.
Fig 8.
R
(mΩ)
DSon
(S)
g
fs
50
40
30
20
10
14
12
10
8
6
0
gate-source voltage; typical values
drain current; typical values
Drain-source on-state voltage as a function of
Forward transconductance as a function of
5
0
N-channel TrenchMOS standard level FET
20
10
40
BUK7511-55A
60
15
V
© NXP B.V. 2010. All rights reserved.
GS
80
(V)
I
D
03nd22
03nd20
(A)
100
20
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