AT90PWM1 Atmel Corporation, AT90PWM1 Datasheet - Page 236

• Manufacturer Part Number: AT90PWM1
• Manufacturer: Atmel Corporation

Specifications of AT90PWM1

• Flash (kbytes): 8 Kbytes
• Pin Count: 24
• Max. Operating Frequency: 16 MHz
• Cpu: 8-bit AVR
• # Of Touch Channels: 8
• Hardware Qtouch Acquisition: No
• Max I/o Pins: 19
• Ext Interrupts: 4
• Usb Speed: No
• Usb Interface: No
• Spi: 1
• Graphic Lcd: No
• Video Decoder: No
• Camera Interface: No
• Adc Channels: 8
• Adc Resolution (bits): 10
• Adc Speed (ksps): 125
• Analog Comparators: 2
• Resistive Touch Screen: No
• Temp. Sensor: No
• Crypto Engine: No
• Sram (kbytes): 0.5
• Eeprom (bytes): 512
• Self Program Memory: YES
• Dram Memory: No
• Nand Interface: No
• Picopower: No
• Temp. Range (deg C): -40 to 105
• I/o Supply Class: 2.7 to 5.5
• Operating Voltage (vcc): 2.7 to 5.5
• Fpu: No
• Mpu / Mmu: no / no
• Timers: 4
• Output Compare Channels: 12
• Input Capture Channels: 1
• Pwm Channels: 7
• 32khz Rtc: No
• Calibrated Rc Oscillator: Yes

Table 88. Serial Programming Instruction Set
236
Instruction
Programming Enable
Chip Erase
Read Program Memory
Load Program Memory Page
Write Program Memory Page
Read EEPROM Memory
Write EEPROM Memory
AT90PWM1
a new byte, the programmed value will read correctly. This is used to determine when the next
byte can be written. This will not work for the value 0xFF, but the user should have the following
in mind: As a chip-erased device contains 0xFF in all locations, programming of addresses that
are meant to contain 0xFF, can be skipped. This does not apply if the EEPROM is re-pro-
grammed without chip erasing the device. In this case, data polling cannot be used for the value
0xFF, and the user will have to wait at least t
Table 87
Table 87. Minimum Wait Delay Before Writing the Next Flash or EEPROM Location
Figure 22-11. Serial Programming Waveforms
Symbol
t
t
t
WD_FLASH
WD_EEPROM
WD_ERASE
1010 1100
1010 1100
0010 H000
0100 H000
0100 1100
1010 0000
1100 0000
SERIAL DATA OUTPUT
SERIAL CLOCK INPUT
Byte 1
SERIAL DATA INPUT
for t
WD_EEPROM
SAMPLE
(MOSI)
(MISO)
0101 0011
100x xxxx
000a aaaa
000x xxxx
000a aaaa
000x xxaa
000x xxaa
(SCK)
Byte 2
Instruction Format
value.
MSB
MSB
xxxx xxxx
xxxx xxxx
bbbb bbbb
xxbb bbbb
bbxx xxxx
bbbb bbbb
bbbb bbbb
Byte 3
WD_EEPROM
xxxx xxxx
xxxx xxxx
oooo oooo
iiii iiii
xxxx xxxx
oooo oooo
iiii iiii
Byte4
Minimum Wait Delay
before programming the next byte. See
Operation
Enable Serial Programming after
RESET goes low.
Chip Erase EEPROM and Flash.
Read H (high or low) data o from
Program memory at word address a:b.
Write H (high or low) data i to Program
Memory page at word address b. Data
low byte must be loaded before Data
high byte is applied within the same
address.
Write Program Memory Page at
address a:b.
Read data o from EEPROM memory at
address a:b.
Write data i to EEPROM memory at
address a:b.
4.5 ms
3.6 ms
9.0 ms
LSB
LSB
4378C–AVR–09/08