TDF8590TH/N1S,118 NXP Semiconductors, TDF8590TH/N1S,118 Datasheet - Page 15

• Manufacturer Part Number: TDF8590TH/N1S,118
• Description: IC PWR AMP AUDIO CLASS D 24HSOP
• Manufacturer: NXP Semiconductors
• Type: Class Dr

Specifications of TDF8590TH/N1S,118

• Output Type: 1-Channel (Mono) or 2-Channel (Stereo)
• Max Output Power X Channels @ Load: 160W x 1 @ 8 Ohm; 80W x 2 @ 4 Ohm
• Voltage - Supply: ±14 V ~ 29 V
• Features: Depop, Differential Inputs, Mute, Short-Circuit and Thermal Protection, Standby
• Mounting Type: Surface Mount
• Package / Case: 24-HSOP
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption
• Other names: 935289143118

NXP Semiconductors
11. Switching characteristics
Table 10.
V
12. Application information
TDF8590TH_2
Product data sheet
Symbol
Internal oscillator
f
External oscillator or frequency tracking
V
V
Drain source on-state resistance of the output transistors
R
R
osc
DD
f
H(OSC)min
L(OSC)max
DSon(ls)
DSon(hs)
track
= 27 V; T
Switching characteristics
Parameter
oscillator frequency
minimum HIGH-level voltage on pin OSC
maximum LOW-level voltage on pin OSC
tracking frequency range
low-side drain-source on-state resistance
high-side drain-source on-state resistance
amb
12.1 BTL application
12.2 Output power estimation
= 40 C to +85 C; T
When using the power amplifier in a mono BTL application the inputs of both channels
must be connected in parallel and the phase of one of the inputs must be inverted (see
Figure
demodulation filters.
The achievable output powers in SE and BTL applications can be estimated using the
following expressions:
SE:
BTL:
P
P
o 0.5%
7). The loudspeaker is connected between the outputs of the two single-ended
o 0.5%
j
=
= 40 C to +150 C; unless otherwise specified.
=
---------------------------------------------------------------------------------------------------------------------------------
------------------------------------------------------
R
------------------------------------------------------------------------------------------------------------------------------------------------------------------------- -
------------------------------------------------------------------------------------------- 2V
R
L
L
+
+
R
DSon hs
Rev. 02 — 23 April 2007
R
DSon hs
R
L
2
Conditions
typical; R
maximum; R
minimum; R
referred to SGND
referred to SGND
T
T
T
T
+
j
j
j
j
80 W SE (4 ) or 1
= 85 C; I
= 25 C; I
= 85 C; I
= 25 C; I
R
+
R
s L
R
L
DSon ls
2
ext(OSC)
V
DS
DS
DS
DS
ext(OSC)
R
ext(OSC)
P
L
= 6 A
= 6 A
= 6 A
= 6 A
+
= 30.0 k
1 t
2
2R
–
= 48.9 k
= 15.4 k
s L
R
w min
L
160 W BTL (8 ) class-D amplifier
f
P
osc
1 t
Min
290
-
-
4
0
210
-
-
-
-
2
–
TDF8590TH
W
w min
Typ
310
560
200
-
-
-
250
190
300
220
© NXP B.V. 2007. All rights reserved.
f
Max
344
-
-
6
1
600
275
210
330
240
osc
2
W
15 of 30
Unit
kHz
kHz
kHz
V
V
kHz
m
m
m
m