TDF8590TH/N1S,118 NXP Semiconductors, TDF8590TH/N1S,118 Datasheet - Page 13

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TDF8590TH/N1S,118

Manufacturer Part Number
TDF8590TH/N1S,118
Description
IC PWR AMP AUDIO CLASS D 24HSOP
Manufacturer
NXP Semiconductors
Type
Class Dr
Datasheet

Specifications of TDF8590TH/N1S,118

Output Type
1-Channel (Mono) or 2-Channel (Stereo)
Max Output Power X Channels @ Load
160W x 1 @ 8 Ohm; 80W x 2 @ 4 Ohm
Voltage - Supply
±14 V ~ 29 V
Features
Depop, Differential Inputs, Mute, Short-Circuit and Thermal Protection, Standby
Mounting Type
Surface Mount
Package / Case
24-HSOP
Lead Free Status / RoHS Status
Lead free by exemption / RoHS compliant by exemption
Other names
935289143118
NXP Semiconductors
10. Dynamic characteristics
Table 8.
V
otherwise specified. See
as L and the capacitor as C.
[1]
[2]
[3]
[4]
[5]
[6]
[7]
TDF8590TH_2
Product data sheet
Symbol
P
I
THD
G
SVRR
V
CMRR
Z
OM
P
cs
mute
o
n(o)
v(cl)
i(dif)
G
= 27 V; R
v
R
Output power is measured indirectly; based on R
THD is measured in a bandwidth of 22 Hz to 20 kHz, AES brick wall. Maximum limit is guaranteed but may not be 100 % tested.
V
Frequency bandwidth B = 22 Hz to 20 kHz, AES brick wall (see
B = 22 Hz to 20 kHz, AES brick wall, independent of R
V
ripple
i(CM)
s(L)
is the series resistance of inductor of low-pass LC filter in the application.
= V
is the input common mode voltage.
Parameter
output power
peak output current
total harmonic distortion P
closed-loop voltage gain
supply voltage rejection
ratio
differential input
impedance
noise output voltage
channel separation
voltage gain difference
mute attenuation
common mode rejection
ratio
Dynamic characteristics (SE)
ripple(max)
L
= 4 ; f
10.1 Dynamic characteristics (SE)
= 2 V (peak-to-peak value); source resistance R
i
= 1 kHz; f
Section 12.7
osc
= 310 kHz; R
Conditions
L = 10 H; C = 1 F; T
V
L = 10 H; C = 1 F; T
V
L = 22 H; C = 680 nF; T
R
L = 22 H; C = 680 nF; T
R
current limiting, see
P
operating; f
operating; f
mute; f
standby; f
between the input pins INP and INM
operating; V
operating; V
mute; V
mute; V
P
f
f
for the SE application schematics. The 2nd-order demodulation filter coil is referred to
i
i(CM)
P
P
o
o
o
L
L
= 1 kHz; V
= 1 W; f
= 1 W; f
= 1 W; R
= 18 V; THD = 0.5 %
= 18 V; THD = 10 %
= 4 ; V
= 4 ; V
= 1 kHz; V
ripple
P
P
= 27 V
= 18 V
DSon
ripple
i
i
ripple
ripple
P
P
= 1 kHz
s(L)
= 1 kHz
= 10 kHz
S
in
P
P
Rev. 02 — 23 April 2007
= 27 V; THD = 0.5 %
= 27 V; THD = 10 %
= 0 ; f
= 27 V; R
= 18 V; R
= 1 V (RMS value)
measurement (see
= 100 Hz
S
< 0.1
i(CM)
= 100 Hz
= 1 kHz
(see
2
Section 6.4.3
= 1 V (RMS value)
Section
i
80 W SE (4 ) or 1
j
j
= 1 kHz
= 85 C; R
= 85 C; R
Section
[1]
S
S
j
j
; T
S
= 85 C;
= 85 C;
= 0
= 0
= 0 .
amb
12.4).
12.4).
Section
= 40 C to +85 C; T
L
L
= 2 ;
= 2 ;
12.3).
[2]
[2]
[2]
[2]
[3]
[3]
[4]
[4]
[4]
[4]
[5]
[5]
[6]
[6]
[7]
160 W BTL (8 ) class-D amplifier
Min
-
-
-
-
8
-
-
25
-
40
-
-
45
-
-
-
-
-
-
-
-
j
= 40 C to +150 C; unless
Typ
48
60
65
80
-
0.02
0.10
26
55
50
55
80
68
170
145
125
85
70
-
73
75
TDF8590TH
© NXP B.V. 2007. All rights reserved.
Max
-
-
-
-
-
0.2
-
27
-
-
-
-
-
-
-
-
-
-
1
-
-
Unit
W
W
W
W
A
%
%
dB
dB
dB
dB
dB
k
dB
dB
dB
dB
13 of 30
V
V
V
V

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