SI3200-FS Silicon Laboratories Inc, SI3200-FS Datasheet - Page 53

IC LINEFEED INTRFC 100V 16SOIC

SI3200-FS

Manufacturer Part Number
SI3200-FS
Description
IC LINEFEED INTRFC 100V 16SOIC
Manufacturer
Silicon Laboratories Inc
Series
ProSLIC®r
Datasheets

Specifications of SI3200-FS

Package / Case
16-SOIC (3.9mm Width)
Function
Subscriber Line Interface Concept (SLIC), CODEC
Interface
GCI, PCM, SPI
Number Of Circuits
2
Voltage - Supply
3.3V, 5V
Current - Supply
110µA
Power (watts)
941mW
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Includes
Battery Switching, BORSCHT Functions, DTMF Generation and Decoding, FSK Tone Generation, Modem and Fax Tone Detection
Product
SLIC
Supply Voltage (min)
3.13 V
Supply Current
0.11 mA, 8.8 mA
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
0 C
Mounting Style
SMD/SMT
Number Of Channels
2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI3200-FS
Manufacturer:
SILICON LABS/芯科
Quantity:
20 000
Part Number:
SI3200-FSR
Manufacturer:
SILICON
Quantity:
11 430
The Si3220 also can add a dc offset component to the
ringing signal and detect a ring trip event by monitoring
the dc loop current flowing once the terminal equipment
transitions to the off-hook state. Although adding dc
offset reduces the maximum available ringing amplitude
(using the same ringing supply), this method is required
to reliably detect a valid ring trip event when sourcing
longer loop lengths. The dc offset can be programmed
from 0 to 64.32 V in the RINGOF RAM address as
required to produce adequate dc loop current in the off-
hook state. Depending on the loop length and the ring
trip method, the ac or dc ring trip detection circuits are
disabled by setting their respective ring trip thresholds,
RTACTH or RTDCTH, sufficiently high so that they do
not trip under any condition.
Si3225 Ring Trip Detection
The Si3225 implements an external ring trip detection
scheme when using a standard battery-backed external
ringing generator. In this application, the centralized
ringing generator produces an unbalanced ringing
signal that is distributed to individual TIP/RING pairs. A
per-channel ringing relay is required to disconnect the
Si3225 from the TIP/RING pair and apply the ringing
signal. By monitoring the ringing feed path across a ring
feed sense resistor (R
series with the ringing source, the Si3225 can detect the
dc current path created when the hook switch inside the
terminal equipment closes. The internal ring trip
detection circuitry is identical to that illustrated in
Figure 27. Figure 31 illustrates the typical external ring
trip circuitry required for the Si3225. Because of the
long loop nature of these applications, a dc ring trip
detection scheme is typically used. The user can
disable the ac ring trip detection circuitry by setting the
RTACTH threshold sufficiently high so it does not trip
under any condition.
Relay Driver Considerations
The Dual ProSLIC devices include up to three
dedicated relay drivers to drive external ringing and/or
test relays. Test relay drivers TRD1a, TRD1b, TRD2a,
and TRD2b are provided in all product versions, and
ringing relay drivers RRDa and RRDb are included for
the Si3225 only. In most applications, the relay can be
driven directly from the Dual ProSLIC with no external
relay drive circuitry required. Figure 28 illustrates the
internal relay driver circuitry using a 3 V or 5 V relay.
RING
in Figure 31 on page 56) in
Rev. 1.0
The internal driver logic and drive circuitry are powered
by the same V
(VDD1–VDD4 pins). When operating external relays
from a V
internal diode network provides protection against
overvoltage conditions from flyback spikes when the
relay is opened. Either 3 V or 5 V relays can be used in
the configuration shown in Figure 28, and either
polarized or non-polarized relays are acceptable if the
V
impedance, R
11 Ω while sinking less than the maximum rated 85 mA
into the pin.
If the operating voltage of the relay (V
the Dual ProSLIC V
circuit is required to eliminate leakage from V
through
configuration, a polarized relay will provide optimal
overvoltage
components. Figure 29 illustrates the required external
drive circuit, and Table 31 provides recommended
values for R
supplies. The output impedance, R
driver pins is a constant 63 Ω while sourcing less than
the maximum rated 28 mA out of the pin.
CC
Figure 28. Dual ProSLIC Internal Relay Drive
Si3220/
Si3225
and V
Driver
Relay
Logic
CC
the
DRV
supply equal to the chip’s V
DD
IN
DD
protection
, of the relay driver pins is a constant
internal
for typical relay characteristics and V
supply as the chip’s main V
supplies are identical. The input
GDD
V
DD
DD
Circuitry
supply voltage, an external drive
Si3220/Si3225
protection
and
TRD1a/b
TRD2a/b
RRDa/b
minimal
OUT
CC
V
diode.
CC
) is higher than
, of the relay
DD
non-polarized)
3 V/5 V Relay
(polarized or
supply, an
CC
DD
In
external
to V
supply
this
DD
CC
53

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