SI3200-FS Silicon Laboratories Inc, SI3200-FS Datasheet - Page 15

IC LINEFEED INTRFC 100V 16SOIC

SI3200-FS

Manufacturer Part Number
SI3200-FS
Description
IC LINEFEED INTRFC 100V 16SOIC
Manufacturer
Silicon Laboratories Inc
Series
ProSLIC®r
Datasheets

Specifications of SI3200-FS

Package / Case
16-SOIC (3.9mm Width)
Function
Subscriber Line Interface Concept (SLIC), CODEC
Interface
GCI, PCM, SPI
Number Of Circuits
2
Voltage - Supply
3.3V, 5V
Current - Supply
110µA
Power (watts)
941mW
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Includes
Battery Switching, BORSCHT Functions, DTMF Generation and Decoding, FSK Tone Generation, Modem and Fax Tone Detection
Product
SLIC
Supply Voltage (min)
3.13 V
Supply Current
0.11 mA, 8.8 mA
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
0 C
Mounting Style
SMD/SMT
Number Of Channels
2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI3200-FS
Manufacturer:
SILICON LABS/芯科
Quantity:
20 000
Part Number:
SI3200-FSR
Manufacturer:
SILICON
Quantity:
11 430
Table 10. DC Characteristics (V
(V
Table 11. Switching Characteristics—General Inputs
(V
Parameter
High Level Input Voltage
Low Level Input Voltage
High Level Output
Voltage
Low Level Output
Voltage
SDITHRU internal pullup
resistance
Relay Driver Source Imped-
ance
Relay Driver Sink Impedance
Input Leakage Current
Parameter
Rise Time, RESET
RESET Pulse Width, GCI Mode
RESET Pulse Width, SPI Daisy Chain Mode
Notes:
DD
DD
1. All timing (except Rise and Fall time) is referenced to the 50% level of the waveform. Input test levels are V
2. The minimum RESET pulse width assumes the SDITHRU pin is tied to ground via a pulldown resistor no greater than
, V
, V
DD1
DD1
0.4 V, V
10 kΩ per device.
–V
–V
DD4
DD4
IL
=
=
=
0.4 V. Rise and Fall times are referenced to the 20% and 80% levels of the waveform.
3.13 V to 3.47 V, T
3.13 to 5.25 V, T
2
Symbol
A
R
=
A
V
V
V
R
V
OUT
I
DD
OH
=
OL
0 to 70 °C for K/F-Grade, –40 to 85 °C for B/G-Grade, C
IH
IN
L
IL
0 to 70 °C for K/F-Grade, –40 to 85 °C for B/G-Grade)
, V
DD1
GPOa/b, TRD1a/b, TRD2a/b:
–V
BATSELa/b, RRDa/b,
V
V
DD4
DD1
DD1
DTX, SDO, INT,
Test Condition
I
Rev. 1.0
Symbol
IO < 28 mA
IO < 85 mA
I
O
SDITHRU:
–V
–V
=
I
O
O
= –40 mA
3.3 V)
= –4 mA
t
t
DD4
DD4
t
= 4 mA
rl
rl
r
= 3.13 V
= 3.13 V
1
Min
500
6
0.7 x V
V
DD
Min
35
Typ
– 0.6
Si3220/Si3225
DD
L
=
Typ
50
63
11
20 pF)
Max
5
0.3 x V
Max
5.25
0.72
±10
0.4
IH
DD
=
Unit
ns
ns
µs
V
Unit
DD
kΩ
µA
V
V
V
V
15

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