PSMN9R0-25YLC,115 NXP Semiconductors, PSMN9R0-25YLC,115 Datasheet - Page 8

• Manufacturer Part Number: PSMN9R0-25YLC,115
• Description: MOSFET Power N-chnl25V9.1m logic lvl MOSFET in LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN9R0-25YLC,115

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 9.1 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 46 A
• Power Dissipation: 34 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: LFPAK
• Fall Time: 5 ns
• Gate Charge Qg: 12 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 10 ns
• Lead Free Status / Rohs Status: Details

NXP Semiconductors
PSMN9R0-25YLC
Product data sheet
Fig 8.
Fig 10. Sub-threshold drain current as a function of
(A)
I
D
(S)
g
10
10
10
10
10
10
60
fs
40
20
-1
-2
-3
-4
-5
-6
0
drain current; typical values
gate-source voltage
Forward transconductance as a function of
0
0
20
Min
1
N-channel 25 V 9.1 mΩ logic level MOSFET in LFPAK using NextPower technology
Typ
Max
40
2
V
All information provided in this document is subject to legal disclaimers.
003aag201
I
003aag203
D
GS
(A)
(V)
Rev. 2 — 1 November 2011
60
3
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
(A)
GS(th)
(V)
I
D
60
40
20
3
2
1
0
0
-60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics; drain current as a
0
Min (5mA)
Max (1mA)
0
1
PSMN9R0-25YLC
T
j
I
= 150 ° C
D
= 5mA
60
2
1mA
120
T
3
j
= 25 ° C
© NXP B.V. 2011. All rights reserved.
003aag204
003aag202
V
T
GS
j
( ° C)
(V)
180
4
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