PSMN9R0-25YLC,115 NXP Semiconductors, PSMN9R0-25YLC,115 Datasheet - Page 5

• Manufacturer Part Number: PSMN9R0-25YLC,115
• Description: MOSFET Power N-chnl25V9.1m logic lvl MOSFET in LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN9R0-25YLC,115

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 9.1 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 46 A
• Power Dissipation: 34 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: LFPAK
• Fall Time: 5 ns
• Gate Charge Qg: 12 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 10 ns
• Lead Free Status / Rohs Status: Details

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN9R0-25YLC
Product data sheet
Symbol
R
Fig 5.
th(j-mb)
Z
(K/W)
th(j-mb)
10
10
10
-1
-2
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-6
Thermal characteristics
0.05
0.02
δ = 0.5
0.2
0.1
single shot
Parameter
thermal resistance from junction to mounting base
N-channel 25 V 9.1 mΩ logic level MOSFET in LFPAK using NextPower technology
10
-5
All information provided in this document is subject to legal disclaimers.
10
-4
Rev. 2 — 1 November 2011
10
-3
Conditions
see
Figure 5
10
-2
PSMN9R0-25YLC
Min
-
10
P
-1
tp
Typ
4.14
T
© NXP B.V. 2011. All rights reserved.
003aag198
δ =
t
p
Max
4.36
(s)
T
tp
t
1
Unit
K/W
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