PSMN9R0-25YLC,115 NXP Semiconductors, PSMN9R0-25YLC,115 Datasheet - Page 3

• Manufacturer Part Number: PSMN9R0-25YLC,115
• Description: MOSFET Power N-chnl25V9.1m logic lvl MOSFET in LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN9R0-25YLC,115

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 9.1 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 46 A
• Power Dissipation: 34 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: LFPAK
• Fall Time: 5 ns
• Gate Charge Qg: 12 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 10 ns
• Lead Free Status / Rohs Status: Details

NXP Semiconductors
PSMN9R0-25YLC
Product data sheet
Fig 1.
Fig 3.
(A)
I
D
50
40
30
20
10
0
mounting base temperature
Continuous drain current as a function of
Single pulse avalanche rating; avalanche current as a function of avalanche time
0
50
N-channel 25 V 9.1 mΩ logic level MOSFET in LFPAK using NextPower technology
100
(A)
I
AL
10
10
150
2
1
10
All information provided in this document is subject to legal disclaimers.
-3
003aag195
T
mb
( ° C)
200
Rev. 2 — 1 November 2011
10
-2
10
-1
(2)
(1)
Fig 2.
P
(%)
der
120
80
40
0
1
function of mounting base temperature
Normalized total power dissipation as a
0
003aag196
t
AL
(ms)
10
50
PSMN9R0-25YLC
100
150
© NXP B.V. 2011. All rights reserved.
T
mb
03na19
(°C)
200
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