TC58NVG1S3ETA00 Toshiba, TC58NVG1S3ETA00 Datasheet - Page 55

• Manufacturer Part Number: TC58NVG1S3ETA00
• Manufacturer: Toshiba

Specifications of TC58NVG1S3ETA00

• Cell Type: NAND
• Density: 2Gb
• Access Time (max): 30us
• Interface Type: Serial
• Boot Type: Not Required
• Address Bus: 1b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP-I
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 256M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Supplier Unconfirmed

(5)
(6)
RY
Acceptable commands after Serial Input command “80h”
Address Change in Serial Data Input command “85h”, Auto Program command “10h”, Multi Page Program
command “11h”, Auto Program with Data Cache Command “15h”, or the Reset command “FFh”.
performed and the device operation is set to the mode which the input command specifies.
Addressing for program operation
the block to MSB (most significant bit) page of the block. Random page address programming is prohibited.
/
Once the Serial Input command “80h” has been input, do not input any command other than the Column
WE
If a command other than “85h” , “10h” , “11h” , “15h” or “FFh” is input, the Program operation is not
Within a block, the pages must be programmed consecutively from the LSB (least significant bit) page of
BY
From the LSB page to MSB page
DATA IN: Data (1)
Command other than
“85h”, “10h”, “11h”, “15h” or “FFh”
80
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80
Page 0
Page 1
Page 2
XX
Address input
Data (64)
Data register
Mode specified by the command.
(32)
(64)
(1)
(2)
(3)
55
Ex.) Random page program (Prohibition)
DATA IN: Data (1)
FF
Page 31
Page 63
Page 0
Page 1
Page 2
10
Programming cannot be executed.
TC58NVG1S3ETA00
Data (64)
Data register
(32)
(64)
(2)
(3)
(1)
2010-05-21C