TC58NVG1S3ETA00 Toshiba, TC58NVG1S3ETA00 Datasheet - Page 53

• Manufacturer Part Number: TC58NVG1S3ETA00
• Manufacturer: Toshiba

Specifications of TC58NVG1S3ETA00

• Cell Type: NAND
• Density: 2Gb
• Access Time (max): 30us
• Interface Type: Serial
• Boot Type: Not Required
• Address Bus: 1b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP-I
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 256M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Supplier Unconfirmed

Internal erase
voltage
When a Status Read command (70h) is input after a Reset
RY
RY
RY
RY
When a Reset (FFh) command is input during erasing
When a Reset (FFh) command is input during Read operation
When a Reset (FFh) command is input during Ready
When two or more Reset commands are input in succession
RY
/
/
/
/
BY
BY
BY
BY
/
BY
00
10
The second
FF
D0
30
FF
FF
t
command is invalid, but the third
RST
(max 6 μ s)
(1)
FF
53
70
t
FF
FF
RST
(max 6 μ s)
t
RST
FF
(max 500 μ s)
(2)
FF
command is valid.
TC58NVG1S3ETA00
I/O status : Pass/Fail → Pass
: Ready/Busy → Ready
2010-05-21C
00
00
00
(3)
FF