TC58NVG1S3ETA00 Toshiba, TC58NVG1S3ETA00 Datasheet - Page 43

• Manufacturer Part Number: TC58NVG1S3ETA00
• Manufacturer: Toshiba

Specifications of TC58NVG1S3ETA00

• Cell Type: NAND
• Density: 2Gb
• Access Time (max): 30us
• Interface Type: Serial
• Boot Type: Not Required
• Address Bus: 1b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP-I
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 256M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Supplier Unconfirmed

RY/
BY
Data Cache
Page Buffer
Cell Array
Page Copy (2)
By using Page Copy (2), data in a page can be copied to another page after the data has been read out.
When the block address changes (increments) this sequenced has to be started from the beginning.
Command
Page Copy (2) operation is as following.
1 Data for Page N is transferred to the Data Cache.
2 Data for Page N is read out.
3 Copy Page address M is input and if the data needs to be changed, changed data is input.
4 Data Cache for Page M is transferred to the Page Buffer.
5 After the Ready state, Data for Page N + P1 is output from the Data Cache while the data of Page M is being programmed.
input
00
CA0 to CA11, PA0 to PA16
Page N
Address input
1
(Page N)
Address
Data for Page N
30
t
R
1
Data output
Col = 0 start
2
2
Data for Page N
8C
CA0 to CA11, PA0 to PA16
3
Address input
(Page M)
Address
3
Data for Page M
Data input
43
When changing data,
changed data is input.
15
4
t
DCBSYW2
4
00
CA0 to CA11, PA0 to PA16
Address input
(Page N+P1)
Address
Page M
Page N + P1
5
3A
t
Data for Page N + P1
DCBSYR2
Col = 0 start
Data output
5
TC58NVG1S3ETA00
2010-05-21C
A
A