TC58NVG1S3ETA00 Toshiba, TC58NVG1S3ETA00 Datasheet - Page 44

• Manufacturer Part Number: TC58NVG1S3ETA00
• Manufacturer: Toshiba

Specifications of TC58NVG1S3ETA00

• Cell Type: NAND
• Density: 2Gb
• Access Time (max): 30us
• Interface Type: Serial
• Boot Type: Not Required
• Address Bus: 1b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP-I
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 256M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Supplier Unconfirmed

RY
/
BY
Data Cache
Page Buffer
Cell Array
A
A
Command
input
6
7
8
9
Page N + P1
8C
CA0 to CA11, PA0 to PA16
Copy Page address (M + R1) is input and if the data needs to be changed, changed data is input.
After programming of page M is completed, Data Cache for Page M + R1 is transferred to the Page Buffer.
By the 15h command, the data in the Page Buffer is programmed to Page M + R1. Data for Page N + P2 is transferred to the Data cache.
The data in the Page Buffer is programmed to Page M + Rn − 1. Data for Page N + Pn is transferred to the Data Cache.
Page M
6
(Page M+R1)
Address input
Address
Data for Page M + R1
6
Data input
When changing data,
changed data is input.
7
Data for Page M + R1
15
t
DCBSYW2
7
00
CA0 to CA11, PA0 to PA16
Page M + R1
Page N + P2
Address input
(Page N+P2)
Address
8
Data for Page N + P2
44
3A
t
DCBSYR2
Col = 0 start
Data output
8
Page M + Rn − 1
00
CA0 to CA11, PA0 to PA16
(Page N+Pn)
Address input
Address
Page N + Pn
9
TC58NVG1S3ETA00
Data for Page N + Pn
3A
t
DCBSYR2
9
Col = 0 start
Data output
2010-05-21C
Page M + Rn − 1
B
B