TC58NVG1S3ETA00 Toshiba, TC58NVG1S3ETA00 Datasheet - Page 48

• Manufacturer Part Number: TC58NVG1S3ETA00
• Manufacturer: Toshiba

Specifications of TC58NVG1S3ETA00

• Cell Type: NAND
• Density: 2Gb
• Access Time (max): 30us
• Interface Type: Serial
• Boot Type: Not Required
• Address Bus: 1b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP-I
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 256M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Supplier Unconfirmed

Auto Block Erase
follows the Erase Setup command “60h”. This two-cycle process for Erase operations acts as an extra layer of
protection from accidental erasure of data due to external noise. The device automatically executes the Erase
and Verify operations.
Multi Block Erase
diagram. The device automatically executes the Erase and Verify operations and the result can be monitored by
checking the status by 71h status read command. For details on 71h status read command, refer to section
“Multi Page Program with Data Cache”.
Internal addressing in relation with the Districts
•
•
•
Address input restriction for the Multi Block Erase
(Restriction)
Maximum one block should be selected from each District.
For example;
(60) [District 0] (60) [District 1] (D0)
(Acceptance)
There is no order limitation of the District for the address input.
For example, following operation is accepted;
(60) [District 1] (60) [District 0] (D0)
It requires no mutual address relation between the selected blocks from each District.
Make sure to terminate the operation with D0h command. If the operation needs to be terminated before D0h
command input, input the FFh reset command to terminate the operation.
The Auto Block Erase operation starts on the rising edge of WE after the Erase Start command “D0h” which
The Multi Block Erase operation starts by selecting two block addresses before D0h command as in below
To use Multi Block Erase operation, the internal addressing should be considered in relation with the District.
There are following restrictions in using Multi Block Erase
RY
RY
The device consists from 2 Districts.
Each District consists from 1024 erase blocks.
The allocation rule is follows.
/
/
District 0: Block 0, Block 2, Block 4, Block 6,···, Block 2046
District 1: Block 1, Block 3, Block 5, Block 7,···, Block 2047
BY
BY
60
60
Block Address
input: 3 cycles
District 0
Block Address
input: 3 cycles
60
Block Address
input: 3 cycles
Erase Start
command
D0
District 1
Erase Start
command
D0
Busy
48
Busy
Status Read
Status Read
command
command
70
71
TC58NVG1S3ETA00
I/O
I/O
Fail
Fail
Pass
Pass
2010-05-21C