ECH8660-TL-H ON Semiconductor, ECH8660-TL-H Datasheet - Page 4

• Manufacturer Part Number: ECH8660-TL-H
• Description: MOSFET N/P-CH 30V 4.5A ECH8
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of ECH8660-TL-H

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 59 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: -
• Gate Charge (qg) @ Vgs: 4.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 240pF @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SMD
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

240
200
160
120
1.0
0.1
1.0
10
80
40
10
0.01
7
5
3
2
7
5
3
2
0
5
3
2
7
5
3
2
9
8
7
6
5
4
3
2
1
0
0.1
0
0
V DS =10V
I D =4.5A
V DD =15V
V GS =10V
I D =1A
2
2
2
3
1
Gate-to-Source Voltage, V GS -- V
3
5 7
4
Total Gate Charge, Qg -- nC
2A
R DS (on) -- V GS
Drain Current, I D -- A
Drain Current, I D -- A
SW Time -- I D
0.1
5
V GS -- Qg
|
6
y
2
7
fs | -- I D
2
1.0
8
3
5 7
3
10
2
1.0
3
12
t d (on)
4
2
V DS =10V
Ta=25°C
5
14
3
IT14214
IT14216
IT16223
IT14218
[Nch]
[Nch]
[Nch]
[Nch]
7
5 7
ECH8660
10
16
5
0.01
0.01
100
200
160
120
1.0
0.1
1.0
0.1
10
10
80
40
0
--60 --40 --20
7
5
3
2
7
5
3
2
7
5
3
2
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0.2
0.1
0
Ta=25° C
Single pulse
When mounted on ceramic substrate
(1200mm
Operation in this
area is limited by R DS (on).
2
5
3
0.4
2
Ciss, Coss, Crss -- V DS
Drain-to-Source Voltage, V DS -- V
Drain-to-Source Voltage, V DS -- V
Diode Forward Voltage, V SD -- V
×0.8mm)
Ambient Temperature, Ta -- ° C
5
0
7
10
R DS (on) -- Ta
20
1.0
I S -- V SD
0.6
A S O
40
2
15
60
3
0.8
80
5
20
7
100
10
No. A1358-4/6
1.0
PW≤10μs
120
25
V GS =0V
f=1MHz
2
140
IT14215
IT14217
IT14195
IT14213
[Nch]
[Nch]
[Nch]
[Nch]
3
160
1.2
30
5