ECH8660-TL-H ON Semiconductor, ECH8660-TL-H Datasheet

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ECH8660-TL-H

Manufacturer Part Number
ECH8660-TL-H
Description
MOSFET N/P-CH 30V 4.5A ECH8
Manufacturer
ON Semiconductor
Series
-r
Datasheet

Specifications of ECH8660-TL-H

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
59 mOhm @ 2A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
4.5A
Vgs(th) (max) @ Id
-
Gate Charge (qg) @ Vgs
4.4nC @ 10V
Input Capacitance (ciss) @ Vds
240pF @ 10V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
8-SMD
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ECH8660-TL-H
Manufacturer:
ON Semiconductor
Quantity:
2 050
Ordering number : ENA1358A
ECH8660
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Electrical Characteristics at Ta=25°C
Marking : TF
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
high-speed switching , thereby enablimg high-density mounting
4V drive
Halogen free compliance
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer ' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer ' s
products or equipment.
Parameter
Parameter
V DSS
V GSS
I D
I DP
P D
P T
Tch
Tstg
V (BR)DSS
I DSS
I GSS
V GS (off)
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
Symbol
Symbol
http://semicon.sanyo.com/en/network
SANYO Semiconductors
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (1200mm
When mounted on ceramic substrate (1200mm
I D =1mA, V GS =0V
V DS =30V, V GS =0V
V GS =±16V, V DS =0V
V DS =10V, I D =1mA
ECH8660
Conditions
Conditions
D2210 TKIM/N1908PE MSIM TC-00001695
2
×0.8mm) 1unit
2
×0.8mm)
DATA SHEET
min
1.2
N-channel
30
Ratings
--55 to +150
±20
4.5
typ
30
30
150
1.3
1.5
Continued on next page.
P-channel
max
--4.5
--30
±20
--30
±10
2.6
No. A1358-1/6
1
Unit
Unit
°C
°C
μA
μA
W
W
A
A
V
V
V
V

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ECH8660-TL-H Summary of contents

Page 1

... Ordering number : ENA1358A ECH8660 Features The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and • high-speed switching , thereby enablimg high-density mounting 4V drive • Halogen free compliance • Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage ...

Page 2

... Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage ECH8660 Symbol Conditions | yfs | V DS =10V = (on =2A =10V R DS (on =1A =4. (on =1A =4V ...

Page 3

... Drain-to-Source Voltage ECH8660 Electrical Connection 0.02 1 [P-channel --10V V OUT PW=10μs D.C.≤1% P.G [Nch 0.7 0.8 0.9 1.0 0 IT14210 Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Top view --15V -- =7.5Ω OUT G ECH8660 50Ω =10V Gate-to-Source Voltage IT14211 No. A1358-3/6 [Nch] 5 ...

Page 4

... Gate-to-Source Voltage 1 0 0.01 0.1 1.0 Drain Current Time -- =15V =10V 1 0.1 1.0 Drain Current =10V =4. Total Gate Charge ECH8660 [Nch] 200 Ta=25°C 160 120 --60 --40 --20 IT16223 [Nch =10V 0.2 IT14214 [Nch 100 (on IT14216 [Nch 1 Operation in this 3 area is limited (on). ...

Page 5

... Drain Current Time -- I D 100 --15V --10V (on --0.1 --1.0 Drain Current ECH8660 [Pch] -- --10V --5 --4 --3 --2 --1 0 --0.8 --0.9 --1.0 0 --0.5 IT14186 [Pch] 160 Ta=25°C 140 120 100 --12 --14 --16 --60 --40 --20 IT16224 [Pch] -- --1 --0 --0.01 --0.2 ...

Page 6

... Ambient Temperature °C Note on usage : Since the ECH8660 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co ...

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