ECH8660-TL-H ON Semiconductor, ECH8660-TL-H Datasheet - Page 3

• Manufacturer Part Number: ECH8660-TL-H
• Description: MOSFET N/P-CH 30V 4.5A ECH8
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of ECH8660-TL-H

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 59 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: -
• Gate Charge (qg) @ Vgs: 4.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 240pF @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SMD
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Package Dimensions
unit : mm (typ)
7011A-001
Switching Time Test Circuit
[N-channel]
P.G
10V
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0V
PW=10μs
D.C.≤1%
0
0
V IN
0.1
1
8
0.65
Bot t om View
Top View
V IN
0.2
Drain-to-Source Voltage, V DS -- V
2.9
G
50Ω
0.3
5
4
I D -- V DS
0.3
0.4
V DD =15V
D
0.5
S
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : ECH8
0.15
I D =2A
R L =7.5Ω
ECH8660
0.6
V OUT
0 t o 0.02
0.7
0.8
0.9
IT14210
[Nch]
1.0
ECH8660
[P-channel]
Electrical Connection
--10V
P.G
0V
PW=10μs
D.C.≤1%
1
8
6
5
4
3
2
1
0
0
V IN
7
2
V IN
1
Gate-to-Source Voltage, V GS -- V
50Ω
G
6
3
V DD = --15V
I D -- V GS
2
D
4
5
S
I D = --2A
R L =7.5Ω
ECH8660
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
Top view
3
V OUT
4
No. A1358-3/6
V DS =10V
IT14211
[Nch]
5