ECH8660-TL-H ON Semiconductor, ECH8660-TL-H Datasheet - Page 2

• Manufacturer Part Number: ECH8660-TL-H
• Description: MOSFET N/P-CH 30V 4.5A ECH8
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of ECH8660-TL-H

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 59 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: -
• Gate Charge (qg) @ Vgs: 4.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 240pF @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SMD
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Continued from preceding page.
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Parameter
| yfs |
R DS (on)1
R DS (on)2
R DS (on)3
R DS (on)1
R DS (on)2
R DS (on)3
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
V (BR)DSS
I DSS
I GSS
V GS (off)
| yfs |
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
Symbol
V DS =10V, I D =2A
I D =2A, V GS =10V
I D =1A, V GS =4.5V
I D =1A, V GS =4V
I D =--1mA, V GS =0V
V DS =--30V, V GS =0V
V GS =±16V, V DS =0V
V DS =--10V, I D =--1mA
V DS =--10V, I D =--2A
I D =--2A, V GS =--10V
I D =--1A, V GS =- -4.5V
I D =--1A, V GS =--4V
V DS =10V, f=1MHz
V DS =10V, f=1MHz
V DS =10V, f=1MHz
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
V DS =10V, V GS =10V, I D =4.5A
V DS =10V, V GS =10V, I D =4.5A
V DS =10V, V GS =10V, I D =4.5A
I S =4.5A, V GS =0V
V DS =--10V, f=1MHz
V DS =--10V, f=1MHz
V DS =--10V, f=1MHz
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
V DS =--10V, V GS =--10V, I D =--4.5A
V DS =--10V, V GS =--10V, I D =--4.5A
V DS =--10V, V GS =--10V, I D =--4.5A
I S =--4.5A, V GS =0V
ECH8660
Conditions
min
--1.2
--30
2.5
1
Ratings
typ
--0.85
1.66
0.64
0.84
430
105
110
240
6.2
7.5
4.4
1.1
4.2
7.5
2.0
2.5
45
85
45
30
11
17
45
71
82
75
26
45
35
10
max
--2.3
--1.2
±10
119
155
100
115
1.2
59
--1
59
No. A1358-2/6
Unit
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
pF
pF
pF
nC
nC
nC
μA
μA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
ns
ns
ns
S
S
V
V
V
V