PSMN070-200P NXP Semiconductors, PSMN070-200P Datasheet - Page 9

• Manufacturer Part Number: PSMN070-200P
• Description: MOSFET Power RAIL PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of PSMN070-200P

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.07 Ohms
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 35 A
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 90 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 100 ns
• Lead Free Status / Rohs Status: Details
• Other names: PSMN070-200P,127

Philips Semiconductors
August 1999
MECHANICAL DATA
Notes
1. This product is supplied in anti-static packaging. The gate-source input must be protected against static
2. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC18.
3. Epoxy meets UL94 V0 at 1/8".
N-channel TrenchMOS
discharge during transport or handling.
Fig.17. SOT404 surface mounting package. Centre pin connected to mounting base.
Plastic single-ended surface mounted package (Philips version of D
(one lead cropped)
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT404
4.50
4.10
A
H D
1.40
1.27
A 1
D
D 1
0.85
0.60
b
(TM)
IEC
0.64
0.46
c
transistor
max.
1
D
11
e
E
JEDEC
1.60
1.20
D 1
2
e
REFERENCES
10.30
9.70
E
3
0
b
2.54
e
scale
EIAJ
9
2.5
2.90
2.10
L p
5 mm
15.40
14.80
H D
PSMN070-200B; PSMN070-200P
mounting
2.60
2.20
2
Q
base
-PAK); 3 leads
L p
A 1
Q
PROJECTION
c
EUROPEAN
A
ISSUE DATE
98-12-14
99-06-25
SOT404
Product specification
Rev 1.000