PSMN070-200P NXP Semiconductors, PSMN070-200P Datasheet - Page 4

• Manufacturer Part Number: PSMN070-200P
• Description: MOSFET Power RAIL PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of PSMN070-200P

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.07 Ohms
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 35 A
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 90 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 100 ns
• Lead Free Status / Rohs Status: Details
• Other names: PSMN070-200P,127

Philips Semiconductors
August 1999
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
SYMBOL PARAMETER
I
I
V
t
Q
j
N-channel TrenchMOS
S
SM
rr
= 25˚C unless otherwise specified
SD
rr
Continuous source current
(body diode)
Pulsed source current (body
diode)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
(TM)
transistor
CONDITIONS
I
I
V
F
F
GS
= 25 A; V
= 20 A; -dI
= 0 V; V
GS
R
F
/dt = 100 A/ s;
= 30 V
= 0 V
4
PSMN070-200B; PSMN070-200P
MIN. TYP. MAX. UNIT
-
-
-
-
-
0.85
160
1.0
Product specification
-
-
140
1.2
35
-
-
Rev 1.000
ns
A
A
V
C