PSMN070-200P NXP Semiconductors, PSMN070-200P Datasheet - Page 6

• Manufacturer Part Number: PSMN070-200P
• Description: MOSFET Power RAIL PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of PSMN070-200P

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.07 Ohms
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 35 A
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 90 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 100 ns
• Lead Free Status / Rohs Status: Details
• Other names: PSMN070-200P,127

Philips Semiconductors
August 1999
Fig.9. Normalised drain-source on-state resistance.
N-channel TrenchMOS
2.9
2.7
2.5
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
40
35
30
25
20
15
10
50
45
40
35
30
25
20
15
10
5
0
5
0
-60 -40 -20
Fig.8. Typical transconductance, T
0
0
Drain current, ID (A)
Transconductance, gfs (S)
Normalised On-state Resistance
VDS > ID X RDS(ON)
VDS > ID X RDS(ON)
Fig.7. Typical transfer characteristics.
5
1
R
Junction temperature, Tj (C)
10
0
DS(ON)
Gate-source voltage, VGS (V)
20
2
Drain current, ID (A)
15
/R
I
D
g
40
fs
DS(ON)25 ˚C
= f(V
= f(I
60
20
3
GS
D
)
80
)
= f(T
25
175 C
100 120 140 160 180
(TM)
Tj = 25 C
4
j
)
30
j
transistor
= 25 ˚C .
Tj = 25 C
175 C
5
35
40
6
6
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
4.5
3.5
2.5
1.5
0.5
PSMN070-200B; PSMN070-200P
10000
4
3
2
1
0
1000
V
-60 -40 -20
100
Fig.12. Typical capacitances, C
10
GS(TO)
C = f(V
Threshold Voltage, VGS(TO) (V)
0.1
0
Capacitances, Ciss, Coss, Crss (pF)
Fig.11. Sub-threshold drain current.
Drain current, ID (A)
Fig.10. Gate threshold voltage.
I
= f(T
D
0.5
DS
= f(V
); conditions: V
j
); conditions: I
0
1
Gate-source voltage, VGS (V)
minimum
Junction Temperature, Tj (C)
GS)
Drain-Source Voltage, VDS (V)
20
1.5
; conditions: T
1
40
2
typical
60
minimum
2.5
typical
GS
D
80
maximum
= 1 mA; V
= 0 V; f = 1 MHz
3
100 120 140 160 180
j
Product specification
10
= 25 ˚C
3.5
iss
, C
maximum
DS
4
oss
, C
= V
Coss
Crss
Ciss
Rev 1.000
4.5
rss
GS
100
.
5